12-31-2014 01:19 PM
Hi,
For some work I am doing, i need to simulate and prove the IV characteristic of an ideal diode (e.g. the diode acting like a switch with infinite current at 0V) and i intended to do this using a virtual diode in multisim. Does anyone know what parameters would be the best to give an ideal characteristic when using the IV analyser? I have tried reducing the junction Potential (VJ) to a very low value (0.0000001V) but it does not seem to make a change. The diode instead conducts at approx 0.7V and has a curve like a real diode?
01-05-2015 05:07 AM
Hi Jamie19,
Apologies for the delay in responding to this post.
I would recommend looking at the links below. The Youtube link explains the diode IV characteristic and its use in Multsim. THe second link is for some diode fundamentals, which although is not directly related to your orginal question, you may find useful.
https://www.youtube.com/watch?v=fGYyYm7J3JA
http://www.ni.com/white-paper/5644/en/
Kind regards,
DanC12
01-05-2015 10:21 AM
You can try setting the "n" (emission coefficient) parameter to a small value, such as 0.1 or even 0.01.
Alternatively, you can try using the "DIODE" component in the Power/SWITCHES group. You can directly set the "Forward voltage drop" parameter to 0. Both the forward and reverse regions are modeled by ideal resistors.
11-27-2020 06:07 AM
The best way is this one, try making emission coefficient 0.01 and more you increase decimal values more it will become ideal diode.